Light Emitting Si‐Based Mie Resonators: Toward a Huygens Source of Quantum Emitters

Silicon-based micro- and nano-structures for light management at near-infrared visible frequencies have been widely exploited guided optics metasurfaces. However, emission with this material has hampered by the indirect character of its bandgap. Here it is shown that, via ion beam implantation, emitting G-centers can be directly embedded within Si-based Mie resonators previously obtained solid state dewetting. Size- position-dependent, directional 120 K demonstrated experimentally confirmed finite difference time domain simulations. It estimated an optimal coupling resonant antennas, a collection efficiency about 90% reached using conventional objective lens. The integration these telecom-frequency emitters in antennas relevant their efficient exploitation quantum applications more generally to photonic